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FPAB20BH60B pfc spm? 3 series for single-phase boost pfc december 2013 ?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FPAB20BH60B rev. c4 package marking & ordering information device device marking package packing type quantity FPAB20BH60B FPAB20BH60B spmic-027 rail 10 FPAB20BH60Bpfc spm ? 3 series for single-phase boost pfc features ul certified no. e209204 (ul1557) 600 v - 20 a single-phase boost pfc with integral gate driver and protection very low thermal resistance using al 2 o 3 dbc substrate full-wave bridge rectif ier and high-performance output diode built-in ntc thermistor for temperature monitoring optimized for 20khz switching frequency isolation rating: 2500 vrms/min. applications single-phase boost pfc converter related source an-9090 - pfc spm 3 series users guide an-9091 - boost pfc inductor design guide general description the FPAB20BH60B is an advanced pfc spm ? 3 module providing a fully-featured, high-performance boost pfc (power factor co rrection) input power stage for consumer, medical, and industrial applications. these modules integrat e optimized gate drive of the built-in igbt to minimize emi and losses, while also providing multiple on-module protection features including under-voltage lockout, over-current shutdown, thermal monitoring, and fault reporti ng. these modules also feature a full-wave rect ifier, and high-performance output diode for additional space savings and mounting convenience. figure 1. package overview
FPAB20BH60B pfc spm? 3 series for single-phase boost pfc ?2010 fairchild semiconductor corporation 2 www.fairchildsemi.com FPAB20BH60B rev. c4 integrated power functions pfc converter for single-phase ac / dc power conversion (please refer to figure 3) integrated drive, protection, and system control functions for igbts: gate drive circuit, over-current protection (ocp), control supply circuit under-voltage lock-out (uvlo) protecti on fault signal: corresponding to oc and uv fault built-in thermistor: temperature monitoring input interface: active-high interface, works with 3.3 / 5 v logic, schmitt-trigger input pin configuration figure 2. top view notes : 1. for the measurement point of case temperature(t c ), please refer to figure 2. 12.205 18.345 (1)v cc (2)com (3)com (4)com (5)in (6)v fo (7)c fod (8)c sc (9)r th (10)v th (11)n.c (12)n.c (13)n (14)n (15)n (16)n (17)nr (18)nr (19)nr (20)nr (21)p (22)p (23)n.c (24)l (25)pr (26)r (27)s d b c s u b s t r a t e c a s e t e m p e r a t u r e ( t c ) d e t e c t i n g p o i n t t o p v i e w 12.205 18.345 (1)v cc (2)com (3)com (4)com (5)in (6)v fo (7)c fod (8)c sc (9)r th (10)v th (11)n.c (12)n.c (13)n (14)n (15)n (16)n (17)nr (18)nr (19)nr (20)nr (21)p (22)p (23)n.c (24)l (25)pr (26)r (27)s d b c s u b s t r a t e c a s e t e m p e r a t u r e ( t c ) d e t e c t i n g p o i n t t o p v i e w
FPAB20BH60B pfc spm? 3 series for single-phase boost pfc ?2010 fairchild semiconductor corporation 3 www.fairchildsemi.com FPAB20BH60B rev. c4 pin descriptions * 11th and 12th pins are cut. please refer to package outline drawings for more detail. internal equivalent circ uit and input/output pins figure 3. internal block diagram pin number pin name pin description 1v cc common bias voltage for ic and igbt driving 2,3,4 com common supply ground 5 in signal input for igbt 6v fo fault output 7c fod capacitor for fault output duration selection 8c sc capacitor (low-pass filter) for over-current detection 9r (th) series resistor for the use of thermistor 10 v (th) thermistor bias voltage 11,12 n.c no connection* 13~16 n igbt emitter 17~20 n r negative dc-link of rectifier 21,22 p positive rail of dc-link 23 n.c no connection 24 l reactor connection pin 25 p r positive dc-link of rectifier 26 r ac input for r-phase 27 s ac input for s-phase csc cfod vfo in com vcc out (21,22) p (24) l (25) pr ntc thermistor (26) r (27) s (5) in (2~4) com (1) vcc (6) vfo (7) cfod (8) csc (10) vth (9) rth (13~16) n (17~20) nr
FPAB20BH60B pfc spm? 3 series for single-phase boost pfc ?2010 fairchild semiconductor corporation 4 www.fairchildsemi.com FPAB20BH60B rev. c4 absolute maximum ratings (t j = 25c, unless otherwise specified.) converter part control part total system thermal resistance symbol item condition rating unit v i supply voltage applied between r - s 264 v rms v i(surge) supply voltage (surge) applied between r - s 500 v v pn output voltage applied between p - n 450 v v pn(surge) output voltage (surge) applied between p - n 500 v v ces collector - emitter voltage 600 v i c each igbt collector current t c = 25c, t j < 150c 20 a i cp each igbt collector current (peak) t c = 25c, t j < 150c, under 1ms pulse width 40 a p c collector dissipation t c = 25c 89 w v rrm repititive peak reverse voltage 600 v i fsm peak forward surge current single half sine-wave 250 a t j operating junction temperature -40 ~ 150 c symbol item condition rating unit v cc control supply voltage applied between v cc - com 20 v v in input signal voltage applied between in - com -0.3 ~ v cc +0.3 v v fo fault output supply voltage applied between v fo - com -0.3 ~ v cc +0.3 v i fo fault output current sink current at v fo pin 5 ma v sc current sensing input voltage applied between c sc - com -0.3 ~ v cc +0.3 v symbol item condition rating unit t stg storage temperature -40 ~ 125 c v iso isolation voltage 60 hz, sinusoidal, ac 1 minute, connect pins to heat sink plate 2500 v rms symbol item condition min. typ. max. unit r ? (j-c)q junction to case thermal resistance igbt - - 1.4 c/w r ? (j-c)f frd - - 1.4 c/w r ? (j-c)r rectifier (per 1 / 4 module) - - 2.1 c/w
FPAB20BH60B pfc spm? 3 series for single-phase boost pfc ?2010 fairchild semiconductor corporation 5 www.fairchildsemi.com FPAB20BH60B rev. c4 electrical characteristics (t j = 25c, unless otherwise specified.) converter part notes: 2. t on and t off include the propagation delay of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see figure 4. figure 4. switching time definition symbol item condition min. typ. max. unit v ce(sat) igbt saturation voltage v cc = 15 v, v in = 5 v, i c = 20 a - 2.3 3.0 v v ff frd forward voltage i f = 20 a - 1.8 2.5 v v fr rectifier forward voltage i f = 20 a - 1.2 1.5 v t on switching times v pn = 400 v, v cc = 15v, i c = 20 a v in = 0 v ? 5 v, inductive load (note 2) -4 5 0-n s t c(on) -2 0 0-n s t off -3 5 0-n s t c(off) -8 0-n s t rr -7 0-n s i rr -6-a i ces collector - emitter leakage current v ce = v ces --2 5 0 ? a t on t c(on) t rr i rr 10% of i c 100% of i c 90% of i c 120% of i c 15% of v ce (a) turn-on t off t c(off) (b) turn-off i c v ce v ce i c v in v in 15% of v ce 10% of i c
FPAB20BH60B pfc spm? 3 series for single-phase boost pfc ?2010 fairchild semiconductor corporation 6 www.fairchildsemi.com FPAB20BH60B rev. c4 control part notes: 3. the fault-out pulse width t fod depends on the capacitance value of c fod according to the following approximate equation: c fod = 18.3 x 10 -6 x t fod [f]. 4. t th is the temperature of know case temperature(t c ), please make the experiment considering your application. figure 5. r-t curve of the built-in thermistor symbol item condition min. typ. max. unit i qccl quiescent v cc supply current v cc = 15 v, in = 0 v v cc - com - - 26 ma v foh fault output voltage v sc = 0 v, v fo circuit: 4.7 k ? to 5 v pull-up 4.5 - - v v fol v sc = 1 v, v fo circuit: 4.7 k ? to 5 v pull-up - - 0.8 v v sc(ref) over-current trip level v cc = 15 v 0.45 0.5 0.55 v uv ccd supply circuit under-voltage protection detection level 10.7 11.9 13.0 v uv ccr reset level 11.2 12.4 13.2 v t fod fault-out pulse width c fod = 33 nf (note 3) 1.4 1.8 2.0 ms v in(on) on threshold voltage applied between in - com 2.8 - - v v in(off) off threshold voltage - - 0.8 v r th resistance of thermistor @ t th = 25c (note 4, figure 5) - 47.0 - k ? @ t th = 100c (note 4, figure 5) - 2.9 - k ? 0 25 50 75 100 125 0 50 100 150 200 min typ max r-t curve resistance r th [k ? ] temperature t th [] 95 100 105 110 115 120 125 1 2 3 4 min typ max resistance r th [k ? ] temperature t th []
FPAB20BH60B pfc spm? 3 series for single-phase boost pfc ?2010 fairchild semiconductor corporation 7 www.fairchildsemi.com FPAB20BH60B rev. c4 recommended operating condition mechanical characteristics and ratings figure 6. flatness measurement position symbol item condition min. typ. max. unit v i input supply voltage applied between r - s 187 220 253 v rms v pn output voltage applied between p - n - 380 400 v v cc control supply voltage applied between v cc(l) - com 13.5 15.0 16.5 v dv cc /dt control supply variation -1 - 1 v/ ? s f pwm pwm input frequency t j ?? 150c - 20 - khz i i allowable input current t c < 90c, v i = 220 v, v pn = 380 v v pwm = 20 khz --2 0a peak item condition min. typ. max. unit mounting torque mounting screw: m3 recommended 0.62 n m 0.51 0.62 0.72 n m device flatness see figure 6 0 - +120 ? m weight -1 5 . 0 0- g (+) (+) (+)
FPAB20BH60B pfc spm? 3 series for single-phase boost pfc ?2010 fairchild semiconductor corporation 8 www.fairchildsemi.com FPAB20BH60B rev. c4 time charts of protective function p1 : normal operation: igbt on and conducting current p2 : under-voltage detection p3 : igbt gate interrupt p4 : fault signal generation p5 : under-voltage reset p6 : normal operation: igbt on and conducting current figure 7. under-voltage protection p1 : normal operation: igbt on and conducting current p2 : over current detection p3 : igbt gate interrupt / fault signal generation p4 : igbt is slowly turned off p5 : igbt off signal p6 : igbt on signa: but igbt cannot be turned on during the fault output activation p7 : igbt off state p8 : fault output reset and normal operation start figure 8. over-cur rent protection internal igbt gate-emitter voltage input signal output current fault output signal control supply voltage p1 p2 p3p4 p6 p5 uv detect uv reset internal ig b t g ate-e m itter v oltage input signal output current sensing voltage fault output signal p1 p2 p3 p4 p6 p5 p7 p8 o c r eference voltage (0.5v) r c f ilte r d e la y oc detection
FPAB20BH60B pfc spm? 3 series for single-phase boost pfc ?2010 fairchild semiconductor corporation 9 www.fairchildsemi.com FPAB20BH60B rev. c4 fig. 9. application example notes: 5. each capacitors should be located as close to pfc spm ? product pins as possible. 6. its recommended that anti-parallel diode should be connected with igbt. csc cfod vfo in com vcc out p l pr ntc thermistor p f c c o n t r o l l e r + 5 v + 1 5 v + 5 v r s v ac n nr in com vcc vfo cfod csc vth rth
FPAB20BH60B pfc spm? 3 series for single-phase boost pfc ?2010 fairchild semiconductor corporation 10 www.fairchildsemi.com FPAB20BH60B rev. c4 detailed package outline drawings package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or data on the drawing and contact a fairchildsemiconductor representative to veri fy or obtain the most recent revision. package specifications do not expand the terms of fairchilds worldwide therm and conditions, specifically the the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/mo/mod27be.pdf
?2010 fairchild semiconductor corporation 11 www.fairchildsemi.com FPAB20BH60B rev. c4 FPAB20BH60B pfc spm? 3 series for single-phase boost pfc
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. typical parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including typic als must be validated for each customer application by customers technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your localsales representative ? semiconductor components industries, llc

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